发明名称 Dual FET oscillator
摘要 A dual FET oscillator includes a first J-FET and a second J-FET connected to it as a source follower. A turned circuit is connected to the gate of the first J-FET and to the second J-FET. Bias voltage is supplied to both J-FET's. Schottky diodes are connected to both J-FET's to limit gate-source voltage.
申请公布号 US4785264(A) 申请公布日期 1988.11.15
申请号 US19870055206 申请日期 1987.05.28
申请人 MOTOROLA, INC. 发明人 KALTENECKER, ROBERT S.;STENGEL, ROBERT E.;ENDERBY, RALPH T.;IRWIN, JAMES S.
分类号 H03B5/12;(IPC1-7):H03B5/12 主分类号 H03B5/12
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