| 摘要 |
<p>The present invention relates to a semiconductor single crystal manufacturing apparatus for continuously zone-melting a polycrystalline semiconductor rod (1) in an axial direction thereof using heating coils (10, 20) surrounding the outer surface of the polycrystalline semiconductor rod (1), said heating coils (10, 20) including a first single-turn induction heating coil (10) having an inner diameter (10a) smaller than the diameter of the polycrystalline semiconductor rod (1) and a second single- or multiple-turn induction heating coil (20) which has an inner diameter larger than that of said first coil (10) and at least the inner peripheral edge of which opposes a peripheral edge portion (4a) of the growing front of a single-crystal semiconductor rod (4) wherein the floating-zone melting process of the polycrystalline semiconductor rod (1) is performed by said first coil (10) while said second coil (20) heats the peripheral edge portion (4a) of the growing front of the single-crystal semiconductor rod (4), thereby controlling the heat dissipation rate as well as to an RF induction heating apparatus for continuously zone-melting a polycrystalline semiconductor rod (1) in the axial direction thereof by using one or a plurality of heating coils (10, 20, 30) surrounding the outer surface of the polycrystalline semiconductor rod (1), said one or plurality of heating coils (10, 20, 30) including a single-turn induction heating coil (10) having an inner diameter smaller than the diameter of the polycrystalline semiconductor rod (1).</p> |
