METHOD FOR GROWING CRYSTAL

摘要

PURPOSE:To improve heating efficiency of a substrate and accurately detect having temperature of the substrate, by heating a specific light absorbing film provided on the back side of the substrate for growing a crystal with visible and infrared rays and etching the light absorbing film after growing the crystal. CONSTITUTION:The back side of a substrate 1' for growing a crystal is covered with a heat-resistant light absorbing film 7 (e.g. carbon film), having excellent absorption characteristics for visible and infrared rays and 0.2-1mum thickness and capable of selectively etching for the substrate 1'. The above-mentioned substrate 1' is then placed in a crystal growth chamber 10 kept in an ultrahigh vacuum and the surface covered with the light absorbing film 7 is irradiated and heated with visible and infrared rays from a heater 3 to detect substrate temperature with a pyrometer 6. The above-mentioned surface of the substrate 1' is simultaneously irradiated with molecular beams 9 from molecular beam cells 8 to grow a crystal thereon. The substrate 1' is subsequently taken out of the crystal growth chamber 10 to etch and remove the light absorbing film 7 on the back side of thereof.