| 摘要 |
PURPOSE:To remove an unrequired current path at the time of reading and to prevent malfunction in readout from being generated, by providing a MOS transistor between respective memory cell and a power source line which supplies a power source to the memory cell in a memory device of X cell system, and connecting the gate electrode of the MOS transistor to the power source line. CONSTITUTION:The MOS transistors C1-C4 are provided between the memory cells M1-M4 and the power source lines 6-1-6-3 which supply the power source to the memory cells M1-M4 are provided, and the gate electrodes of the MOS transistors C1-C4 are connected to the power source lines 6-1-6-3. And power supplying is controlled so that the power supplying to bit lines 4-1-4-2 are performed independently from that to the power source lines 6-1-6-3. In such a way, it is possible to eliminate a leak current path in the memory device of X cell system, and to prevent the malfunction from being generated. |
