| 摘要 |
PURPOSE:To obtain an element wafer having a crystal layer of a multicomponent oxide superconductor by forming a multicomponent oxide superconducting crystal layer on a specified crystal substrate by a liquid phase growth method. CONSTITUTION:For example, a soln. 22 contg. YCuO powder dissolved in a flux comprising a liquid mixture of BaCO3 and B2O3 is prepd. in a Pt crucible 21 of a liquid phase growth device. A specified crystal substrate, i.e. YCuO crystal substrate 23 is held by a holder 25 provided to a tip end of a supporting rod 24 and allowed to contact with the soln. 22. Thus, liquid epitaxial growth is proceeded at a specified cooling rate while revolving the crystal substrate at high speed. By this method, an epitaxial wafer having a uniform Ba2Cu3O7-delta single crystal layer 27 formed on a YCuO crystal substrate 23 with a specified thickness is obtd. |
