| 摘要 |
The cell, pref. of gallium arsenide, consists of a semi-conductor substrate, on which grow the layers of the active device, basically consisting of an emitter layer and a base layer. The electrical contact to the emitter is achieved over the back face of the substrate, which is connected to the emitter by means of conduction channels based on the same material and type of conductivity as the connecting regions between the channels. The channels traverse the base region. Electrical contact to the base layer is achieved frontally, covering only a very small fraction of the frontal surface of the cell.
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