| 摘要 |
PURPOSE:To industrially easily manufacture a Ti target as an LSI wiring material while minimizing respective contents of impurity elements adversely affecting device functions by providing a composition in which respective contents of O2, Fe, Ni, Cr, Na, and K are specified. CONSTITUTION:Acicular Ti is first prepared by a molten-salt electrolytic method, by which the acicular Ti having a composition consisting of <=2500ppm O2, <=10ppm, each, of Fe, Ni, and Cr, <=0.1ppm, each, of Na and K, and the balance essentially Ti is obtained. The above acicular Ti is then charged into an EB melting furnace while preventing contamination from outside, where EB melting is applied to the acicular Ti under the prescribed conditions to produce an ingot. The resulting ingot is cold-forged and worked into a target material by means of mechanical grinding. As a result, the target can be extremely industrially manufactured while minimizing impurity-element contents. |
