发明名称 MAGNETORESISTIVE READ TRANSDUCER
摘要 <p>MAGNETORESISTIVE READ TRANSDUCER A magnetoresistive (MR) read transducer assembly in which the thin film MR layer is longitudinally biased only in the end regions by exchange bias developed by a thin film of antiferromagnetic material that is deposited in direct contact with the MR layer in the end regions. The longitudinal bias is of a level sufficient to maintain the end regions of the MR layer in a single domain state and thereby induce a single domain state in the central region of the MR layer. Transverse bias is produced within the central region of the MR layer of a level sufficient to maintain that region of the MR layer in a linear response mode. Spaced conductive elements are connected to the MR layer within the central region to define a detection region so that signal output means connected to the conductive elements can determine the resistance changes in the detection region of the MR layer as a function of the fields which are intercepted by the MR layer. This invention relates in general to magnetic transducers for reading information signals from a magnetic medium and, in particular, to an improved magnetoresistive read transducer.</p>
申请公布号 CA1253962(A) 申请公布日期 1989.05.09
申请号 CA19860511406 申请日期 1986.06.12
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 TSANG, CHING H.
分类号 G11B5/39;(IPC1-7):G11B5/39 主分类号 G11B5/39
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