发明名称 |
MAGNETORESISTIVE READ TRANSDUCER |
摘要 |
<p>MAGNETORESISTIVE READ TRANSDUCER A magnetoresistive (MR) read transducer assembly in which the thin film MR layer is longitudinally biased only in the end regions by exchange bias developed by a thin film of antiferromagnetic material that is deposited in direct contact with the MR layer in the end regions. The longitudinal bias is of a level sufficient to maintain the end regions of the MR layer in a single domain state and thereby induce a single domain state in the central region of the MR layer. Transverse bias is produced within the central region of the MR layer of a level sufficient to maintain that region of the MR layer in a linear response mode. Spaced conductive elements are connected to the MR layer within the central region to define a detection region so that signal output means connected to the conductive elements can determine the resistance changes in the detection region of the MR layer as a function of the fields which are intercepted by the MR layer. This invention relates in general to magnetic transducers for reading information signals from a magnetic medium and, in particular, to an improved magnetoresistive read transducer.</p> |
申请公布号 |
CA1253962(A) |
申请公布日期 |
1989.05.09 |
申请号 |
CA19860511406 |
申请日期 |
1986.06.12 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
TSANG, CHING H. |
分类号 |
G11B5/39;(IPC1-7):G11B5/39 |
主分类号 |
G11B5/39 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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