| 摘要 |
<p>The present invention relates to a semiconductor device which exposes a P-N junction portion in mesa groove to attain high reverse voltage blocking ability and a method of manufacturing the same. The mesa groove is provided in the form of a ring, and a section thereof is finished in positive bevel configuration being increased in width from a major surface toward an inner portion. Thus, a surface electric field of the mesa groove is weakened to attain high reverse voltage blocking ability, while the mesa groove of positive beveled structure can be accurately formed by employing a drill provided with a cutting edge having a mesa type sectional configuration.</p> |
