| 摘要 |
<p>PURPOSE:To raise sensitivity, and also, to correct the influence of static pressure by providing a differential pressure detection use gauge part and a static pressure detection use gauge part on a silicon plate, and also, providing a piezoresistance element on a stress concentration part which is formed on the silicon plate. CONSTITUTION:A silicon diaphragm 1 consisting of a silicon single crystal plate is fixed to a glass substrate 16, and fixed to a housing 4. To the lower part of the glass substrate 16, a static pressure detection use sensor 18 is fixed. In a part of this static pressure detection use sensor 18, a groove 19 is worked and a thin wall part is formed, and on the upper face of this thin wall part, a static pressure detection use piezogauge resistance 20 is formed by diffusion. The static pressure detection use sensor 18 is separated from the differential pressure detection use diaphragm 1 by a deep groove 29.</p> |
