| 摘要 |
PURPOSE:To prevent the capacity of a depleted layer from generating and to increase by approx. 10% a storage capacity as compared with a conventional one by forming a storage electrode of metallic substance. CONSTITUTION:A semiconductor memory made of a transfer transistor T1 having impurity diffused layers 13, 14 and a gate electrode WL1 and a storage capacity C1 having a storage electrode 16, a dielectric film 17 and a counter electrode 18 is provided on a semiconductor substrate 11. In this case, the electrode 16 is formed of metallic substance. Then, when a DC voltage is applied between the electrodes 16 and 18, a depleted layer like the electrode 16 formed of a polycrystalline semiconductor film is prevented. Accordingly, since the series connection of depleted layer capacities is eliminated in an effective storage capacity, it can be formed of the dielectric capacity itself. Thus, the storage capacity can be increased by approx. 10% as compared with a conventional one. |
