发明名称 |
INTEGRATED SEMICONDUCTOR CIRCUIT HAVING AN ALUMINIUM OR ALUMINIUM ALLOY CONTACT CONDUCTOR PATH AND AN INTERMEDIATE TANTALUM SILICIDE LAYER AS A DIFFUSION BARRIER |
摘要 |
<p>An integrated semiconductor circuit consisting of a silicon substrate having an impurity doped circuit therein, and a layer of silicon dioxide formed on the substrate and having a contact hole therein overlying the circuit. An outer contact interconnect level composed of aluminum or an aluminum alloy provides electrical contact to the circuit. A tantalum disilicide diffusion barrier layer is disposed between the circuit and the interconnect level, with a layer of substantially pure tantalum both above and below the tantalum disilicide diffusion barrier layer.</p> |
申请公布号 |
EP0199078(B1) |
申请公布日期 |
1989.06.07 |
申请号 |
EP19860103595 |
申请日期 |
1986.03.17 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT BERLIN UND MUNCHEN |
发明人 |
HIEBER, KONRAD, DR.;NEPPL, FRANZ, DR.;SCHOBER, KONRAD, DIPL.-PHYS. |
分类号 |
H01L29/43;H01L21/28;H01L23/532 |
主分类号 |
H01L29/43 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|