发明名称 APPARATUS AND METHOD FOR FORMING FILM
摘要 PURPOSE:To form a film of a uniform quality on a large area substrate at a large formation rate by a method wherein a radio frequency applying electrode is formed so as to have an uneven shape and the depths of the recesses are not less than 5mm. CONSTITUTION:A substrate held by a substrate holder 5 is made to advance in a glow discharge generated between a radio frequency applying electrode 1 and a grounding electrode 2 to form a thin film on the substrate continuously. For that purpose, the electrode 1 is formed so as to have protrusions whose widths L are in the range of 0.01-10cm and recesses whose depths (d) are variable. The material of the electrodes 1 and 2 is stainless steel, aluminum or the like. With this constitution, the film can be formed on the large area substrate at a large formation rate and with a uniform quality.
申请公布号 JPH01226147(A) 申请公布日期 1989.09.08
申请号 JP19880051728 申请日期 1988.03.07
申请人 MITSUI TOATSU CHEM INC 发明人 IGARASHI KOJI;FUKUDA NOBUHIRO
分类号 H01L21/205;H01L31/04 主分类号 H01L21/205
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