| 摘要 |
PURPOSE:To control a reverse pattern with good reproducibility without sacrificing device characteristics by forming a substantially non SOG film layer on a resist pattern to reverse the resist pattern. CONSTITUTION:A first layer 2 is formed on a substrate 1, and a desired photoresist is applied on the first layer 2, heat-treated exposed and developed to form second layer resist patterns 31, 32. Third layers 40, 41 and 42 of a substantially non SOG film are formed on the first and second layers 31, 32. Thereafter, only the second layers 31, 32 are melted and simultaneously the third layers 41, 42 on the second layers 31, 32 are removed. In succession, the first layer 2 is etched or melted using a remaining layer 40 of the third layer as a mask material to form a reverse pattern of the second layer resist patterns 31, 32. With such construction, a space pattern less than a size of submicron and a space pattern including one less than submicron and the other above submicron both mixed can be obtained without sacrificing device characteristics. |
