| 摘要 |
PURPOSE:To increase effective length of a path by providing an irregularity part at a ground insulation film so that the path of a resistance pattern may be formed also in a recess. CONSTITUTION:It is formed as a linear polysilicon resistance pattern 1 on a silicon nitride film 4 accumulated on a silicon substrate 3, and the silicon nitride film 4 is provide with a recess 2, on a path, perpendicular to the path, and a polysilicon film 5 covers the side and the bottom of the recess 2, and a current path is formed also in this recess 2. Accordingly, even if it has the same length as thin film resistance element formed on a flat insulation film as a projection plane to the silicon substrate 3 of the thin film resistance element, the effective path length becomes longer. Hereby, even if the width is not narrowed exceptionally, high resistance value can be obtained. |
