发明名称 LEAVE-IN ETCH MASK FOR FOIL-BASED METALLIZATION OF SOLAR CELLS
摘要 Approaches for fabricating foil-based metallization of solar cells based on a leave-in etch mask, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes metal foil portions in alignment with corresponding ones of the alternating N-type and P-type semiconductor regions. A patterned wet etchant-resistant polymer layer is disposed on the conductive contact structure. Portions of the patterned wet etchant-resistant polymer layer are disposed on and in alignment with the metal foil portions.
申请公布号 WO2016210185(A1) 申请公布日期 2016.12.29
申请号 WO2016US39108 申请日期 2016.06.23
申请人 SUNPOWER CORPORATION 发明人 SEWELL, Richard Hamilton;KAVULAK, David Fredric Joel;KIM, Taeseok;HARLEY, Gabriel
分类号 H01L31/0392;H01L21/306;H01L31/0216;H01L31/0232;H01L31/0236;H01L31/18 主分类号 H01L31/0392
代理机构 代理人
主权项
地址