发明名称 |
LEAVE-IN ETCH MASK FOR FOIL-BASED METALLIZATION OF SOLAR CELLS |
摘要 |
Approaches for fabricating foil-based metallization of solar cells based on a leave-in etch mask, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes metal foil portions in alignment with corresponding ones of the alternating N-type and P-type semiconductor regions. A patterned wet etchant-resistant polymer layer is disposed on the conductive contact structure. Portions of the patterned wet etchant-resistant polymer layer are disposed on and in alignment with the metal foil portions. |
申请公布号 |
WO2016210185(A1) |
申请公布日期 |
2016.12.29 |
申请号 |
WO2016US39108 |
申请日期 |
2016.06.23 |
申请人 |
SUNPOWER CORPORATION |
发明人 |
SEWELL, Richard Hamilton;KAVULAK, David Fredric Joel;KIM, Taeseok;HARLEY, Gabriel |
分类号 |
H01L31/0392;H01L21/306;H01L31/0216;H01L31/0232;H01L31/0236;H01L31/18 |
主分类号 |
H01L31/0392 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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