发明名称 |
Trace metals analysis in semiconductor material. |
摘要 |
<p>A method for analyzing and quantifying the individual trace metals content of a semiconductor material in the low to sub-parts per billion (ppba) range. The method comprises (A) float-zone refining of a sample of the semiconductor material creating a melt zone containing essentially all the trace metals of the sample; (B) cooling the melt zone to form a solid zone concentrated in trace metals; (C) separating the solid zone concentrated in trace metals from the sample of the semiconductor material; (D) converting the solid zone concentrated in trace metals into a form suitable for trace metals analysis; (E) analyzing the solid zone with known trace metals analytical techniques; and (F) calculating total trace metals from these analytical results. This method can also be applied to the small tip which forms on the side of the solid zone.</p> |
申请公布号 |
EP0349117(A2) |
申请公布日期 |
1990.01.03 |
申请号 |
EP19890305236 |
申请日期 |
1989.05.24 |
申请人 |
HEMLOCK SEMICONDUCTOR CORPORATION |
发明人 |
MCCORMICK, JAMES ROBERT;HWANG, LYDIA LEE-YORK |
分类号 |
G01N1/28;C30B13/00;C30B29/06;G01N1/40;G01N33/00 |
主分类号 |
G01N1/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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