SEMICONDUCTOR DEVICE COMPRESSING N-CHANNEL AND P-CHANNEL TR. AND PRODUCTION METHOD

摘要

The semiconductor device with an N-channel transistor and a P-channel transistor includes ; (a) a semiinsulating single crystal substrate ; (b) a channel layer of an undoped single crystal semiconductor formed on the substrate having a pair of N+-type impurity regions sandwiching an N-channel region forming a two-dimensional eletron gas layey for the N-channel transistor and a pair of P+-type impurity regions sandwiching a P-channel region forming a two-dimensional hole gas layer for the P-channel transisstor ; (c) a buffer layer of an undoped single crystal semicoductor having an energy gap larger than that of the channel layer and formed on the N-channel and P-channel regions.