发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve bonding strength and prevent side slipping of a wire by forming a polycrystalline silicon layer in a single layer or a plurality of layers within an insulation layer for making the surface of a bonding pad to be in recessed and projecting shape. CONSTITUTION:An insulation layer 2 is laminated on a silicon substrate 1 and a bonding pad 3 is formed on this insulation layer 2. Then, a polycrystalline silicon layer 7 is formed in single layer or a plurality of layers within this insulation layer 2 to make the surface of the bonding pad 3 to be in recessed and projecting shape. Thus, since the side surface area of this recessed and projecting surface can be utilized as a contact surface on bonding, the contact area increases in general as compared with before. It increases bonding strength and prevents side slipping of a wire during bonding operation due to recessed and projecting surface.
申请公布号 JPH0226039(A) 申请公布日期 1990.01.29
申请号 JP19880177935 申请日期 1988.07.14
申请人 MITSUBISHI ELECTRIC CORP 发明人 AONO TETSUYA;YAMADA MICHIHIRO
分类号 H01L21/60 主分类号 H01L21/60
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