| 摘要 |
PURPOSE:To enhance the bond properties of films onto substrates while facilitating the mass diffusion by holding the films between substrates by a method wherein the dopant films used for diffusing impurities such as phosphorus, boron, etc., on semiconductor substrates are composed of the films containing compounds of organic base binder, inorganic base binder and impurity element for diffusion. CONSTITUTION:Polyvinyl acetate and nitrocellulose copolymer selected as vinyl base synthetic resin to be an organic binder, silicon tetrahydroxide selected as inorganic binder and e.g., boron oxide for diffusion are resolved in ethanol. Next, this solution is placed on a clean resin fluoride plate and dried up at the temperature exceeding 50 deg.C to form a dopant film in thickness of 50mum and B2O3 concentration of around 10%. Later, this film is released from the plate to be cut off conforming to the shape of a substrate; both surfaces of this film are coated with acryl base adhesive 2 and furthermore held by two each of roll type releasing sheets 3 to be stored in the roll shape and then taken out for application if necessary. |
