| 发明名称 |
GALLIUM ARSENIDE CRYSTAL GROWN ON SILICON SUBSTRATE AND METHOD OF GROWING SUCH CRYSTAL |
| 摘要 |
<p>A GaAs growth crystal comprises a Si substrate, an intermediate layer formed on the substrate and a GaAs layer grown on the intermediate layer. The intermediate layer includes constituent GaP/GaAsP and GaAsP/GaAs superlattice layers and additionally AIP and AlGaP thin films.</p> |
| 申请公布号 |
CA1265980(A) |
申请公布日期 |
1990.02.20 |
| 申请号 |
CA19850491985 |
申请日期 |
1985.10.01 |
| 申请人 |
DAIDOTOKUSHUKO KABUSHIKIKAISHA;UMENO, MASAYOSHI |
发明人 |
UMENO, MASAYOSHI;SAKAI, SHIRO;SOGA, TETSUO |
| 分类号 |
C30B29/40;C30B29/42;H01L21/18;H01L21/205;H01L29/267;(IPC1-7):C30B25/02 |
主分类号 |
C30B29/40 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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