| 摘要 |
<p>PURPOSE:To prevent the occurrence of a leak current by using the exchange of electrons caused by the tunnel effect between a substrate and a charge storing layer for both data writing and data erasing. CONSTITUTION:A floating gate 3 is formed through a first gate insulating film composed of a thermal oxide film on a substrate 1, and a control gate 4 is formed through a second gate insulating film composed of the thermal oxide film on the floating gate 3. The floating gate 3 is extended until the gate 3 comes over an element separating area, and because of this, the coupled capacity between the floating gate 3 and the control gate 4 can be set larger than the coupled capacity between the floating gate 3 and the substrate 1, and the data can be written and erased only by the exchange of the electrons caused by the tunnel effect between the floating gate 3 and the substrate 1. Thus, the occurrence of the leak current can be prevented.</p> |
