PROCESS FOR ETCHING A METAL OXYDE COATING AND SIMULTANEOUS DEPOSITION OF A POLYMER FILM, APPLICATION OF THIS PROCESS TO THE PRODUCTION OF A TRANSISTOR

摘要

DESCRIPTIVE Process for the etching of a metal oxide coating and the simultaneous deposition of a polymer film and the application of this process to the production of a transistor. The process of the invention consists of subjecting a metal oxide coating (106, 108), located on a glass substrate (100), to the action of a gaseous plasma (109) containing 10 to 88% by volume of hydrogen, 2 to 30% by volume of a hydrocarbon and 10 to 50% of an inert vector gas, bringing about the formation of a polymer coating (110) on the parts of the substrate not provided with oxide, by dissocation of the gaseous mixture, and the partial chemical etching of the oxide (106, 108) by the formation of organometallic compounds.