| 摘要 |
PURPOSE:To improve characteristics of a semiconductor device such as response speed, optical sensitivity or current value by adapting the semiconductor device such that electric charges migrate within a specific a-Si1-xCx:H thin film. CONSTITUTION:A semiconductor device includes, as one of its components, an amorphous thin film 304 containing at least hydrogen atoms and principally composed of silicon and carbon atoms (abbreviated as a-Si1-xCx:H thin film wherein 0<x<=0.4). The a-Si1-xCx:H thin film has, in infrared absorption spectrum, an absorption coefficient at 2090cm<-1> corresponding to three times or less of the absorption coefficient at 2000cm<-1>. ln a plasma CVD process using gaseous mixture consisting of a molecular gas containing Si and H atoms and a molecular gas containing carbon atoms, a luminous intensity SiH of plasma emission spectrum Halpha can be controlled in order to control the state of hydrogen bond alpha(2090)/alpha(2000) in the a-Si1-xCx:H film and thus the photoconductivity can be improved. |
