Vertical isolated-collector transistor of the pnp type incorporating a device for suppressing the effects of parasitic junction components,申请号US19890298651-传众专利搜索

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发明名称	Vertical isolated-collector transistor of the pnp type incorporating a device for suppressing the effects of parasitic junction components
摘要
申请公布号	US4979008(A)	申请公布日期	1990.12.18
申请号	US19890298651	申请日期	1989.01.18
申请人	SGS-THOMSON MICROELECTRONICS S.R.L.	发明人	SILIGONI, MARCO;VILLA, FLAVIO
分类号	H01L21/331;H01L21/8222;H01L27/06;H01L29/08;H01L29/73;H01L29/732	主分类号	H01L21/331
代理机构		代理人
主权项
地址

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