Mfg. insulated monocrystalline silicon island - implanting oxygen into highly doped monocrystalline region for forming insulated buried silicon di:oxide layer

摘要

The silicon island mfr. starts with oxygen implantation into a highly doped monocrystalline silicon region (1) to form a buried, insulated SiO2 layer (2). The layered structure is stabilised and a monocrystalline silicon epitaxial layer (4) is separated, which is low doped as compared with the highly doped silicon region. A mask (5-7) is formed on the epitaxial layer, contg. a doping diffusion barrier (6). A mask trench is photolithographically defined and etched down to the buried, insulated SiO2 layer, serving as an etching stop mask. The trench sides are insulated and the trench is filled. Then a rear mask is formed at the silicon disc rear side. USE/ADVANTAGE - For integrated, electronic circuits, with improved electric and thermal insulation.