| 摘要 |
<p>A method is described for coating a material surface with a silicon thin film, silicon being dissolved in a metallic solution and the dissolved silicon then being precipitated from the solution in a temperature range in which a silicon layer is formed on the metal surface. The solvent is a mixture of gold and a metal or metals which either have a melting point which is below the deposition temperature range or which, together with gold, form a eutectic which has a eutectic temperature which is below the deposition temperature range.</p> |
