| 摘要 |
<p>PURPOSE:To increase oxidation resistance at a high temperature, and decrease reactivity with a ceramic thin film, by forming a thin film electrode composed of Ni-Al based alloy or Ni-Cr-Al based alloy, so as to be in contact with the ceramic thin film. CONSTITUTION:A substrate 1 composed of, e.g. MgO single crystal whose crystal orientation is [100] is prepared, and thin film electrodes 2, 3 are formed by sputtering the following, Ni-Al alloy containing, e.g. 2.5-8wt.% aluminum whose residual part is composed of nickel and trace elements, or Ni-Cr-Al based alloy containing, e.g. 8-25wt.% chromium and 2.5-8wt.% aluminum whose residual part is nickel and trace elements. A ferroelectric ceramic thin film 4 composed of PbTiO3 is formed by sputtering using PbTiO3 ceramics as a target. After that, electrodes 5, 6 are formed on the ceramic thin film 4 at a room temperature, by using the same material as the thin film electrodes 2, 3.</p> |
