Method of manufacturing a semiconductor device, including a step of forming a pattern on a photo-resist film.

摘要

The present invention is directed to a method of manufacturing a semiconductor device, including a step of forming a pattern on a photo-resist. A selected portion (22A) of a resist film (22) is exposed to irradiation light containing the g rays. Then, the resist film is heat treated at about 100 DEG C in an ammonia gas atmosphere created in a heating furnace. After that, the entire surface of the resist film (22) is exposed to the irradiation light of the g rays, this step followed by development using a usual alkaline developing solution. <IMAGE>