| 摘要 |
Memory cell with bipolar transistors and method of use in a random-access memory. A pair of state elements (16, 17) have cross-coupling so that they take opposite states according to the signals applied to them, a pair of bipolar passing transistors (28, 29) are connected to the respective transistors of the state elements in order to apply signals to the state elements, and the current flowing through the passing transistors is monitored in order to determine the states of the state elements. <IMAGE>
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