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发明名称
PROCESS FOR FABRICATING HIGH PERFORMANCE BICMOS CIRCUITS
摘要
申请公布号
US5079177(A)
申请公布日期
1992.01.07
申请号
US19890409545
申请日期
1989.09.19
申请人
NATIONAL SEMICONDUCTOR CORPORATION
发明人
LAGE, CRAIG S.;SMALL, JAMES E.;BASTANI, BAMDAD
分类号
H01L21/02;H01L21/033;H01L21/74;H01L21/8222;H01L21/8249;H01L27/06;H01L27/10
主分类号
H01L21/02
代理机构
代理人
主权项
地址
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