Light-emitting device and the manufacturing method thereof

摘要

A light-emitting device comprises: a first semiconductor layer; a transparent conductive oxide layer including a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region; and a metal layer formed on the transparent conductive oxide layer, wherein the metal layer is pervious to a light emitted from the active layer and comprises a pattern.

主权项

1. A light-emitting device, comprising:
a first semiconductor layer; an active layer formed under the first semiconductor layer; a second semiconductor layer formed under the active layer; a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer, the first and second electrodes form a layout, comprising, in a top view, a first region and a second region; a metal pattern comprising a first metal and designed to correspond the layout, the metal pattern being denser in the second region than in the first region; a transparent conductive oxide layer on the first semiconductor layer; and a diffusion region formed within the transparent conductive oxide layer and comprising diffused atoms of the first metal, wherein, during operation of the light-emitting device, electrical current in the transparent conductive oxide layer has a higher current density under the first region than under the second region.