TFT array substrate and manufacturing method of the same

摘要

A TFT array substrate and a manufacturing method of the same are disclosed by the present disclosure. The TFT array substrate includes a base, a light shielding layer, and a low hydrogen layer. The light shielding layer includes a silicon nitride layer formed on the base, and an amorphous silicon light shielding layer formed on the silicon nitride layer. The low hydrogen layer includes a silicon oxide layer formed on the amorphous silicon light shielding layer of the light shielding layer, and a low hydrogen Poly-Si layer formed on the silicon oxide layer. The layer number of the light shielding layer is equal to that of the low hydrogen layer. The time of manufacturing the light shielding layer matched that of manufacturing the low hydrogen layer, which enhances whole capacity of the TFT array substrate dramatically, and reduces risk of the manufacturing process.

主权项

1. A TFT array substrate comprising:
a base; a light shielding layer comprising:
a silicon nitride layer formed on the base; andan amorphous silicon light shielding layer formed on part of the silicon nitride layer; and a low hydrogen layer comprising:
a silicon oxide layer, which is a unitary layer, formed directly on both the amorphous silicon light shielding layer and the silicon nitride layer of the light shielding layer, the amorphous silicon light shielding layer is surrounded by the silicon oxide layer and the silicon nitride layer of the light shielding layer; anda low hydrogen Poly-Si layer formed on the silicon oxide layer.