| 摘要 |
PURPOSE:To improve a MOSFET in R-ASO at a high temperature by a method wherein a dielectric breakdown is made to occur between an opposite conductivity type high concentration region formed surrounding a channel forming region and a certain conductivity type high concentration region in contact with the former high concentration region. CONSTITUTION:A vacuum nitride film located under an N-type region 14 which is higher than a drain region 1 in impurity concentration and made to serve as a Zener region 13 between a drain and a source and a two-way Zener diode 11 is removed. Boron ions are implanted excluding the edge of a polycrystalline silicon 3 and the two-way Zener diode 11 to form a high concentration P-type region 15. Then, the implanted boron ions are diffused at a temperature of 1150C for 300 minutes. At this point, the high concentration N-type region 14 and the high concentration P-type region 15 are made to form a PN junction. As a dielectric breakdown occurs at the PN junction composed of the N-type region 14 and the P-type region 15, a MOSFET of this design can W remarkably be improved in R-ASO at a high temperature. |
