发明名称 |
SEMICONDUCTOR DEVICES WITH RAISED DOPED CRYSTALLINE STRUCTURES |
摘要 |
Semiconductor devices including an elevated or raised doped crystalline structure extending from a device layer are described. In embodiments, III-N transistors include raised crystalline n+ doped source/drain structures on either side of a gate stack. In embodiments, an amorphous material is employed to limit growth of polycrystalline source/drain material, allowing a high quality source/drain doped crystal to grow from an undamaged region and laterally expand to form a low resistance interface with a two-degree electron gas (2DEG) formed within the device layer. In some embodiments, regions of damaged GaN that may spawn competitive polycrystalline overgrowths are covered with the amorphous material prior to commencing raised source/drain growth. |
申请公布号 |
WO2016186654(A1) |
申请公布日期 |
2016.11.24 |
申请号 |
WO2015US31542 |
申请日期 |
2015.05.19 |
申请人 |
INTEL CORPORATION |
发明人 |
RADOSAVLJEVIC, Marko;DASGUPTA, Sansaptak;GARDNER, Sanaz K.;SUNG, Seung Hoon;THEN, Han Wui;CHAU, Robert S. |
分类号 |
H01L29/778 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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地址 |
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