| 摘要 |
A description is given of a method for producing a nitride compound semiconductor device, comprising the following steps: - growing a first nitride compound semiconductor layer (1) on a growth substrate (10), - depositing a mask layer (11), - growing a second nitride compound semiconductor layer (2) over the mask layer (11), - growing a third nitride compound semiconductor layer (3) in such a way that it has non-planar structures (3a), - growing a fourth nitride compound semiconductor layer (4) in such a way that it has a substantially planar surface, - growing a functional layer sequence (8) of the nitride compound semiconductor device, - connecting the functional layer sequence (8) to a carrier (13), - detaching the growth substrate (10), and - producing coupling-out structures (14) by an etching process, in which the first, second and third nitride compound semiconductor layers (1, 2, 3) are at least partially removed. |
