| 摘要 |
A trench is formed by forming an oxide film (2), a nitride film (3) on a substrate to remove the oxide and nitride films above a trench region to form a contact window, etching the exposed silicon substrate (1) to form a trench (10), doping high concentration of impurities on the surface of trench to form an oxide film (5), applying a photoresist layer (5) in the groove of the doped oxide film, removing the photoresist layer except a botton of the groove, removing the exposed oxide film to remove the photoresist entirely, and diffusing high concentration of impurities from the doped oxide film to the substrate by using a drive-in process to form a selective diffusion region on the substate, thereby improving the reproducibility of semiconductor process.
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