| 摘要 |
PURPOSE:To form a barium titanate-based semiconductor porcelain compsn. having superior withstand voltage characteristic and low specific resistance by substituting Sr and Ca for part of Ba in BaTiO3 and using the resulting compsn. as a base. CONSTITUTION:A barium titanate-based compsn. contg., by mol, 74-97% BaTiO3, 1-25% SrTiO3 and >0.6-<3% CaTiO3 is used as a base and Mn, silica and a semiconductor forming agent are incorporated into the base to obtain a barium titanate-based semiconductor porcelain compsn. |
