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发明名称
MANUFACTURE OF COMPOUND SEMICONDUCTOR SUBSTRATE
摘要
申请公布号
JPH04179219(A)
申请公布日期
1992.06.25
申请号
JP19900308352
申请日期
1990.11.13
申请人
SUMITOMO METAL IND LTD
发明人
KATAHAMA HISASHI
分类号
H01L21/205;H01L21/20
主分类号
H01L21/205
代理机构
代理人
主权项
地址
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