| 摘要 |
PURPOSE:To improve a light emitting efficiency by injecting a current only to a region effective to emit a light from its surface in a surface light emission type light emitting diode. CONSTITUTION:An n-type AlGaAs layer 7, a p-type AlGaAs layer 3, an n-type AlGaAs layer 4 are sequentially laminated on an n-type GaAs substrate 1, and with an SiN film 5 as a mask a diffused region 8a and a connecting region 8b are formed. A p-type electrode 6 is formed on the region 8b, and an n-type electrode 7 is formed on the lower part of the substrate 1. Since the lower part of the electrode 6 is formed in a reverse bias structure, injection of a current is prevented, the current is injected only to the region 8a, and a light can externally be emitted without reflecting on the electrode 6. |
