METHOD OF SELECTIVELY EXPOSING THE SIDEWALLS OF A TRENCH AND ITS USE TO THE FORMING OF A METAL SILICIDE SUBSTRATE CONTACT FOR DIELECTRIC FILLED DEEP TRENCH ISOLATED DEVICES,申请号EP19850106828-传众专利搜索

发明名称	METHOD OF SELECTIVELY EXPOSING THE SIDEWALLS OF A TRENCH AND ITS USE TO THE FORMING OF A METAL SILICIDE SUBSTRATE CONTACT FOR DIELECTRIC FILLED DEEP TRENCH ISOLATED DEVICES
摘要
申请公布号	EP0166983(B1)	申请公布日期	1992.08.26
申请号	EP19850106828	申请日期	1985.06.03
申请人	INTERNATIONAL BUSINESS MACHINES CORPORATION	发明人	GOTH, GEORGE RICHARD;HANSEN, THOMAS ADRIAN;MAKRIS, JAMES STEVE
分类号	H01L21/761;H01L21/302;H01L21/3065;H01L21/74;H01L21/76;H01L21/762;H01L29/41	主分类号	H01L21/761
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