| 摘要 |
PURPOSE: To provide a method for forming a metallic wiring in an ultrahigh integration semiconductor device having submicron interval. CONSTITUTION: The inventive method comprises a step for forming one half metallic wiring 15 regularly, a step for forming an insulator spacer 18 on the side face thereof by etch back, and a step for forming the other half-metallic wiring 21 in the space between the one half metallic wirings 15 formed by the etch back step. According to the method, the spacing of metallic wiring can be set as narrow as 0.1μm by regulating the width of the side wall spacer. Furthermore, coverage of the insulator deposited on the metallic wiring can be improved by the side wall spacer between the metallic wirings and thereby the inventive method is applicable to 64M DRAM and 256M DRAM.
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