| 摘要 |
The present invention is related to a multi full-well pixel for a metal-oxide-semiconductor (MOS) active pixel image sensor. It is further related to a MOS active pixel image sensor comprising a plurality of such pixels. The invention is particularly related to active pixel image sensors realized in complementary MOS (CMOS) technology. According to the invention, a MOS capacitor is used as a switchable capacitor, wherein the gate electrode is connected to the voltage that is to be read out. Semiconductor-side contacts of the MOS capacitor are used to apply a switching control signal that allows the effective capacitance of the MOS capacitor to be selected and being radiation-hard for damaging X-ray radiation.. |
