| 摘要 |
A semiconductor chip (10) comrising a passivation layer (20) of silicon nitride is connected to a lead frame (14) of FeNl or CuFe alloy by metal wires (15) and is covered by a polyimide film (21) of high hardness. The semiconductor device has a reduced sensitivity to the formation of cracks in the passivation layer (20) caused by variations in temperature when the polyimide film (20) has a modulus of eleasticity (E) of at least 1.0.10<1><0>Pa. <IMAGE> <IMAGE> |
