| 摘要 |
<p>PURPOSE:To detect a defective part at a manufacturing process and to correct it without having a bad influence to be caused when a probe is brought into contact with the part by a method wherein the probe is brought into contact with a test part formed at the stage of a lower-layer interconnection, information on the defective part is obtained and an interconnection connected to the defective part is cut and the like. CONSTITUTION:When an interconnection, by a multilayer structure, which is composed of an insulating film and a metal film is executed to a semiconductor-element formation region 201 on a semiconductor wafer 200, pads 203, for test use, which have been connected to an element structure in the semiconductor-element formation region 201 are formed at the stage of a lower-layer interconnection by a multilayer interconnection structure. A probe is brought into contact with the pads 203; information on defective parts in the semiconductor-element formation region 201 is obtained; interconnections connected to the defective parts in the semiconductor-element formation region 201 are cut and upper-layer interconnections by said multilayer interconnection structure are worked on the basis of the information on the defective parts. For example, said pads 203 for test use are formed on scribing lines 202 on a semiconductor wafer 200.</p> |
