发明名称 MASK BLANK AND MASK AS WELL AS PRODUCTION OF MASK AND SPUTTERING TARGET USED FOR THIS METHOD
摘要 PURPOSE:To decrease the stresses of a chromium film contg. titanium or platinum and the warpage of a mask blank as well as to stabilize the film quality by forming the above-mentioned film on a light transparent substrate. CONSTITUTION:The mask blank is produced by using chromium contg. titanium or platinum as a target 4 and executing sputtering by using only the gaseous argon to form the chromium film contg. the titanium or platinum on the light transparent substrate 7. The mask is produced by patterning the mask blank. An alloy of the titanium or platinum and chromium, a sintered body of the titanium or platinum and the chromium, and the titanium or platinum and chromium which are disposed in a mosaic form are used as the target for sputtering. The ratio of the titanium and the platinum is preferably 0.1 to 3%.
申请公布号 JPH04360144(A) 申请公布日期 1992.12.14
申请号 JP19910136137 申请日期 1991.06.07
申请人 FUJITSU LTD 发明人 NAGASHIMA SETSUO;USUI YOICHI
分类号 G03F1/50;G03F1/54;H01L21/027 主分类号 G03F1/50
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