| 摘要 |
<p>PURPOSE:To obtain the programmable logic device capable of writing in configuration with normal operating voltage. CONSTITUTION:Both ends of a SRAM 10 are connected to a line PL through a ferrodielectric condenser 16. The ends of the SRAM 10 are connected by a switch 18. After the SRAM is set to the prescribed state, data is written in the ferrodielectric condenser 16 by turning on a switch 14. At the time of rising, the switch 18 is turned on while turning off the switch 14 so as to make the ends of the SRAM 10 the same electric potential. The switch 14 is turned on in this state, and the difference of the electric potential based on the ferrodielectric polarization in the ferrodielectric condenser 16 is exerted on the ends of the SRAM 10, and the SRAM 10 is set according to the data written in the ferrodielectric condenser 16. Thus, no high voltage is required for a nonvolatile memory.</p> |
