| 摘要 |
A solder for bonding a semiconductor laser diode is used in forming a solder layer on the silicon wafer substrate vapor deposited with chromium and nickel in the thickness of 500-1000 angstroms and 4000-5000 angstroms, respectively. The solder is composed of 85-91 wt.% lead (Pb), 8-12 wt.% tim (Sn), 1-3 wt.% silver (Ag) and 88 wt.% lead, 10 wt.% tin, 2 wt.% silver. Then tin component controls the growth of whisker and minimizes melting of gold and solder migration.
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