POLISHING METHOD OF WAFER SURFACE

摘要

A method for grinding a wafer surface is composed of grinding a surface of the wafer by maintaining the pressure to the grinding surface plate so as not to apply the pressure on the surface of wafer directly through the abrasive, by floating the abrasive in the foams, which are generated during rotation with injection of grinding solution generating the foams between the wafer and grinding surface plate. The grinding solution is deionized water and the abrasive is alumina (Al2O3) with 1 m size. The ratio of the abrasive to grinding solution is 1:10 and the pressure is 0.05-0.2 kg/cm2. The rate of the grinding surface plate is 10-50 rpm.