| 摘要 |
The rod-like polysilicon resistor is composed of a first insulation layer (2), which has predetermined width, length and height, on the upper part of semiconductor substrate, a second insulation layer (3) covering the first insulation layer completely up to the cavity (10) of the edge of the first insulation layer, and polysilicon layer (5) formed in the cavity of peripheral surface of the first insulation layer. The first and second insulation layers are oxide film and niride film, respectively, where the difference of selective etching ratios of the films are big.
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